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| MS1251 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features * * * * * * 175 MHz 12.5 VOLTS POUT = 45 WATTS GP = 6.5 dB MINIMUM INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR capability at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Value 36 18 36 4.0 6.0 145 +200 -65 to +150 Unit V V V V A W Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature C C C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance 1.2 053-7057 Rev - 10-2002 MS1251 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) Symbol BVCBO BVCES BVCEO BVEBO ICES HFE IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5 V STATIC Test Conditions Min. IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A 36 36 18 4.0 --20 Value Typ. ------------- Max. --------5 200 Unit V V V V mA --- DYNAMIC Symbol POUT GP C COB Test Conditions Min. f = 138 - 175 MHz f = 138 - 175 MHz f = 138 - 175 MHz f =1 MHz PIN = 10 W PIN = 10 W PIN = 10 W VCB = 12.5 V VCE = 12.5 V VCE = 12.5 V VCE = 12.5 V 45 6.5 50 --- Value Typ. --------- Max. ------135 Unit W dB % pf IMPEDANCE DATA FREQ 175 MHz PIN = 10 W VCE = 12.5 V ZIN() ) 1.38 + j0.44 ZCL() ) 1.70 + j0.48 053-7057 Rev - 10-2002 MS1251 PACKAGE MECHANICAL DATA 053-7057 Rev - 10-2002 |
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